STMicroelectronics SGT3D5R10MEB PowerGaN Transistor
STMicroelectronics SGT3D5R10MEB PowerGaN Transistor is a 100V, 201A e-mode transistor that provides extremely low conduction losses, high current capability, and ultra-fast switching operation. This transistor features a high switching frequency, enabling compact, high‑power‑density designs with small passives and simplified thermal management. The SGT3D5R10MEB transistor operates at 2.7mΩ typical RDS(ON) drain resistance and -40°C to +150°C operating junction temperature range. This PowerGaN Transistor is ideal for DC-DC converters, motor drivers, and solar system MPPT.
Features
- Dual side cooling package
- Enhancement mode is normally off in the transistor
- Extremely low capacitances
- 2.7mΩ typical RDS(ON) drain resistance
- 255W Total power dissipation (PTOT) at TC = 25°C
- -40°C to +150°C operating junction temperature range
- High power management capability
- Very high switching speed
- Zero reverse recovery charge
Applications
- DC-DC converters
- Motor drivers
- Solar system MPPT
Veröffentlichungsdatum: 2026-08-03
| Aktualisiert: 2026-08-05