200V to 250V HEXFET® Power MOSFETs

Infineon 200V to 250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200V to 250V HEXFET Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with fast switching speed and ruggedized device design provides an extremely efficient and reliable device for use in a wide variety of applications.

Ergebnisse: 26
Auswählen Bild Teile-Nr. Herst. Beschreibung Datenblatt Verfügbarkeit Preis (EUR) Ergebnisse in der Tabelle nach dem Einheitspreis bei Ihrer Menge filtern. Menge RoHS ECAD Model Technologie Montageart Verpackung/Gehäuse Transistorpolung Anzahl der Kanäle Vds - Drain-Source-Durchschlagspannung Id - Drain-Gleichstrom Rds On - Drain-Source-Widerstand Vgs - Gate-Source-Spannung Vgs th - Gate-Source-Schwellspannung Qg - Gate-Ladung Minimale Betriebstemperatur Maximale Betriebstemperatur Pd - Verlustleistung Kanalmodus Verpackung
Infineon Technologies IRFP4229PBFXKMA1
Infineon Technologies MOSFETs IR FET >60-400V 602Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-247AC-3 N-Channel 1 Channel 250 V 44 A 46 mOhms - 30 V, 30 V 5 V 72 nC - 40 C + 175 C 310 W Enhancement Tube
Infineon Technologies MOSFETs IR FET >60-400V 1.556Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220AB-3 N-Channel 1 Channel 200 V 76 A 20 mOhms - 20 V, 20 V 5 V 69 nC - 55 C + 175 C 375 W Enhancement Tube
Infineon Technologies IRFP4668PBFXKMA1
Infineon Technologies MOSFETs IR FET >60-400V 8.282Auf Lager
6.260erwartet ab 25.02.2026
Min.: 1
Mult.: 1

Si Through Hole TO-247AC-3 N-Channel 1 Channel 200 V 130 A 9.7 mOhms - 30 V, 30 V 3 V 161 nC - 55 C + 175 C 520 W Enhancement Tube

Infineon Technologies MOSFETs MOSFT 200V 49A 40mOhm 156nCAC 18.439Auf Lager
6.700erwartet ab 16.02.2026
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 50 A 40 mOhms - 20 V, 20 V 4 V 156 nC - 55 C + 175 C 300 W Enhancement Tube
Infineon Technologies MOSFETs MOSFT 200V 18A 150mOhm 44.7nC 29.246Auf Lager
Min.: 1
Mult.: 1
Rolle: 800
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 200 V 18 A 150 mOhms - 20 V, 20 V 2 V 44.7 nC - 55 C + 175 C 150 W Enhancement Reel, Cut Tape, MouseReel

Infineon Technologies MOSFETs IR FET >60-400V 322Auf Lager
400erwartet ab 25.02.2026
Min.: 1
Mult.: 1

Si Through Hole TO-247AC-3 N-Channel 1 Channel 250 V 93 A 17.5 mOhms - 20 V, 20 V 5 V 180 nC - 55 C + 175 C 520 W Enhancement Tube
Infineon Technologies MOSFETs MOSFT 200V 18A 150mOhm 44.7nC 6.985Auf Lager
8.975erwartet ab 25.02.2026
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 18 A 150 mOhms - 20 V, 20 V 2 V 44.7 nC - 55 C + 175 C 150 W Enhancement Tube

Infineon Technologies MOSFETs 200V, 3.7A, 78 mOhm 29 nC Qg, SO-8 4.937Auf Lager
Min.: 1
Mult.: 1
Rolle: 4.000

Si SMD/SMT SOIC-8 N-Channel 1 Channel 200 V 3.7 A 78 mOhms - 20 V, 20 V 4 V 28 nC - 55 C + 150 C 2.5 W Enhancement Reel, Cut Tape, MouseReel

Infineon Technologies MOSFETs MOSFT 200V 49A 40mOhm 156nCAC 4.785Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 50 A 40 mOhms - 20 V, 20 V 1.8 V 156 nC - 55 C + 175 C 300 W Enhancement Tube
Infineon Technologies MOSFETs MOSFT 200V 24A 78mOhm 25nC Qg 12.878Auf Lager
Min.: 1
Mult.: 1
Rolle: 3.000
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 200 V 24 A 78 mOhms - 20 V, 20 V 1.8 V 25 nC - 55 C + 175 C 144 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs MOSFT 200V 62A 26mOhm 70nC Qg 5.046Auf Lager
Min.: 1
Mult.: 1
Rolle: 800
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 200 V 62 A 26 mOhms - 30 V, 30 V 5 V 70 nC - 40 C + 175 C 330 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs MOSFT 250V 45A 48mOhm 72nC Qg 6.744Auf Lager
Min.: 1
Mult.: 1
Rolle: 800
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 250 V 45 A 48 mOhms - 30 V, 30 V 5 V 72 nC - 40 C + 175 C 330 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies IRFB4227PBFXKMA1
Infineon Technologies MOSFETs IR FET >60-400V 2.575Auf Lager
Min.: 1
Mult.: 1

Si Tube
Infineon Technologies MOSFETs MOSFT 200V 0.6A 2200mOhm 3.9nC 13.466Auf Lager
Min.: 1
Mult.: 1
Rolle: 3.000

Si SMD/SMT TSOP-6 N-Channel 1 Channel 200 V 600 mA 2.2 Ohms - 30 V, 30 V 2 V 3.9 nC - 55 C + 150 C 2 W Enhancement Reel, Cut Tape, MouseReel

Infineon Technologies MOSFETs MOSFT 200V 30A 75mOhm 82nCAC 1.657Auf Lager
1.600erwartet ab 21.05.2026
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 30 A 75 mOhms - 20 V, 20 V 1.8 V 82 nC - 55 C + 175 C 214 W Enhancement Tube
Infineon Technologies MOSFETs MOSFT 200V 44A 54mOhm 60nC 1.426Auf Lager
Min.: 1
Mult.: 1
Rolle: 800
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 200 V 44 A 54 mOhms - 30 V, 30 V 5 V 60 nC - 55 C + 175 C 320 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs MOSFT 200V 24A 78mOhm 25nC Qg 4.629Auf Lager
2.400erwartet ab 05.03.2026
Min.: 1
Mult.: 1
Rolle: 800
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 200 V 24 A 77.5 mOhms - 20 V, 20 V 5 V 38 nC - 55 C + 175 C 144 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies IRFB4229PBFXKMA1
Infineon Technologies MOSFETs IR FET >60-400V 321Auf Lager
1.000erwartet ab 25.02.2026
Min.: 1
Mult.: 1

Si Through Hole TO-220AB-3 N-Channel 1 Channel 250 V 46 A 46 mOhms - 30 V, 30 V 5 V 72 nC - 40 C + 175 C 330 W Enhancement Tube
Infineon Technologies IRFP4227PBFXKMA1
Infineon Technologies MOSFETs IR FET >60-400V 90Auf Lager
800erwartet ab 28.01.2027
Min.: 1
Mult.: 1

Si Tube

Infineon Technologies MOSFETs MOSFT 200V 30A 75mOhm 82nCAC 1.159Auf Lager
3.200erwartet ab 25.02.2026
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 30 A 75 mOhms - 20 V, 20 V 4 V 82 nC - 55 C + 175 C 214 W Enhancement Tube
Infineon Technologies MOSFETs MOSFT 200V 9.5A 300mOhm 23.3nC 1.760Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 9.3 A 300 mOhms - 20 V, 20 V 2 V 23.3 nC - 55 C + 175 C 82 W Enhancement Tube
Infineon Technologies MOSFETs MOSFT 200V 44A 54mOhm 60nC 112Auf Lager
2.000Auf Bestellung
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 44 A 54 mOhms - 30 V, 30 V 1.8 V 91 nC - 55 C + 175 C 3.8 W Enhancement Tube
Infineon Technologies MOSFETs MOSFT 200V 100mOhm 18A 18nC Qg for Aud 2.400Auf Lager
2.000erwartet ab 26.02.2026
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 18 A 100 mOhms - 20 V, 20 V 1.8 V 18 nC - 55 C + 175 C 100 W Enhancement Tube

Infineon Technologies MOSFETs MOSFT 200V 94A 23mOhm 180nCAC
2.792Auf Bestellung
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 94 A 23 mOhms - 30 V, 30 V 1.8 V 180 nC - 55 C + 175 C 580 W Enhancement Tube
Infineon Technologies MOSFETs MOSFT 200V 76A 23.2mOhm 100nC Qg 166Auf Lager
9.594Auf Bestellung
Min.: 1
Mult.: 1
Rolle: 800

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 200 V 72 A 22 mOhms - 20 V, 20 V 1.8 V 100 nC - 55 C + 175 C 375 W Enhancement Reel, Cut Tape, MouseReel