Toshiba Semi Power MOSFETs
Toshiba Semi Power MOSFETs are designed with advanced technologies, achieving low RON characteristics. The Semi Power MOSFETs are very compact and thin at 2 x 2mm and 2.9 x 2.8mm, offering the low loss and compact size MOSFETs required for battery-powered devices such as smartphones and wearable devices.
The Semi Power MOSFETs low RON characteristic provides a reduction to the burden on the heat dissipation design. An advanced trench process is employed, which miniaturizes the cell structure resulting in low RON. The trench processes the Pch7 and Nch9, reducing the on-resistance per unit area by up to 70%, reducing conduction loss.
The devices contribute to energy savings in low-loss switching applications, such as power management and high-speed switching. The Semi Power MOSFETs are ideal for IoT devices and mobile equipment.
Features
- Low on-resistance: 12 to 105mΩ @4.5V
- Wide voltage rating Lineup: VDSS=-20 to 100V
- Channel temperature: 150°C
- Drain power dissipation: 500mW to 1W
Applications
- Power Management Switch
- High-Speed Switching
- IoT Devices
- Mobile Equipment
Ron Graph
View Results ( 10 ) Page
| Teilnummer | Datenblatt | Transistorpolung | Verpackung/Gehäuse | Vds - Drain-Source-Durchschlagspannung | Rds On - Drain-Source-Widerstand |
|---|---|---|---|---|---|
| SSM6K341NU,LF |  |
N-Channel | UDFN-6 | 60 V | 28 mOhms |
| SSM3K333R,LF | |
N-Channel | |||
| SSM3K345R,LF | |
N-Channel | SOT-23F-3 | 20 V | 25 mOhms |
| SSM6J507NU,LF | |
P-Channel | UDFN-6 | 30 V | 20 mOhms |
| SSM6K513NU,LF | |
N-Channel | UDFN-6 | 30 V | 6.5 mOhms |
| SSM6N67NU,LF | |
N-Channel | UDFN-6 | 30 V | 39.1 mOhms |
| SSM3J378R,LF | |
P-Channel | SOT-23F-3 | 20 V | 29.8 mOhms |
| SSM6K361NU,LF | |
N-Channel | UDFN-6 | 100 V | 51 mOhms |
| SSM6J511NU,LF | |
P-Channel | UDFN-6 | 12 V | 6.5 mOhms |
| SSM6K514NU,LF | |
N-Channel | UDFN-6 | 40 V | 8.9 mOhms |
Veröffentlichungsdatum: 2017-02-17
| Aktualisiert: 2022-06-22