Vishay / Siliconix SiAxDJ P-Channel TrenchFET® Power MOSFETs

Vishay Siliconix SiA445EDJ and SiA441DJ are P-Channel TrenchFET® Power MOSFETs featuring Thermally Enhanced PowerPAK®. Designed using the SC-70 package with a footprint area of 2.05mm by 2.05mm, SiA445EDJ is 50% smaller than TSOP-6 devices. The slim 0.6mm profile makes SiA445EDJ 40% smaller than TSOP-6 devices. SiA445EDJ and SiA441DJ offer low on-resistance compared to N-channel down to 11 mΩ and P-channel down to 16mΩ. Also, Vishay Siliconix SiA445EDJ provides 75% higher maximum power dissipation than devices with on-resistance ratings down to 1.2V. A Zener diode in the SiA445EDJ device provides built-in ESD protection with 2000V typical EDS performance. Available in the SC-70 package and 100% Rg tested, SiA445EDJ and SiA441DJ are well-suited for load, battery, and charger switching in handheld devices, including smartphones, tablet PC, and mobile computing.

Features

  • TrenchFET® power MOSFET
  • Thermally enhanced PowerPAK®
  • SC-70 package
    • Small footprint area
    • Low on-resistance
  • 100% Rg tested
  • Typical ESD performance (2000V (SiA445EDJ); 4000V (SiA453EDJ))

Applications

  • Smartphones, tablet PCs, mobile computing
    • Battery switch
    • Charger switch
    • Load switch
  • Portable and consumer device
    • DC/DC converter
    • Motor drive
    • High-side switch in half-bridge and full-bridge converters
Veröffentlichungsdatum: 2012-05-25 | Aktualisiert: 2022-03-11