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Toshiba SSM6x N- & P-Channel MOSFETs

Toshiba SSM6x N- and P-Channel MOSFETs with high-speed switching operate as both power management and analog switches. These MOSFETs provide very low on-resistance (as low as 1.1mΩ to a 115mΩ maximum) for different gate-to-source voltage ranges. The SSM6x MOSFETs are available in small profile packages with surface mount compatibility. These MOSFETs offer a low drain to source on-resistance, operate as DC-to-DC converters, and drive a 1.2V to 4.5V gate voltage. The Toshiba SSM6x MOSFETs deliver less drain power dissipation (up to 150mW), producing less heat while operating within a 12V to 100V input voltage range.

Features

  • 1.5V to 4.5V gate to source drive voltage
  • Low on-resistance 
  • Less drain power dissipation 
  • AEC-Q101 qualified
  • Available packages
    • TSOP6F
    • UDFN6B
    • ES6
    • US6

Applications

  • High-speed switching applications
  • Power management and analog switches 
  • DC-DC converters with low-on resistance

Specifications

  • 12V to 100V input drain to source voltage
  • -55°C to +150°C storage temperature range 
  • 1.1mΩ to 115mΩ on-resistance range
  • 150mW drain power dissipation
  • 5.5ns rise time
  • 2ns fall time

Packaging & Pin Assignments

Toshiba SSM6x N- & P-Channel MOSFETs
Veröffentlichungsdatum: 2018-04-10 | Aktualisiert: 2024-04-18