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ISSI IS67WVH/IS67WVO Memory Devices

ISSI IS67WVH/IS67WVO Memory Devices contain 64Mb/128Mb Pseudo Static Random Access (PSRAM) memory using a self-refresh DRAM array organized as 8M/16M words by 8bits. These memory devices offer up to 400MB/s of high-performance. The IS67WVH HyperRAM™ devices support a HyperBus interface, very low signal count (address, command, and data through 8 DQ pins), and hidden refresh operation. These integrated memory devices feature sequential burst transactions, Read-Write Data Strobe (RWDS), and Double Data Rate (DDR). The IS67WVO memory devices support an Octal Peripheral Interface (OPI) (address, command, and data through 8 SIO pins), very low signal count, and hidden refresh operation. These memory devices are ideal for automotive applications.

Features

  • IS67WVH:
    • HyperBus™ low signal count interface:
      • Read-Write Data Strobe (RWDS):
        • Bidirectional data strobe/mask
        • Output at the start of all transactions to indicate refresh latency
        • Output during read transactions as read data strobe
        • Input during write transactions as write data mask
      • RWDS DCARS timing:
        • During read transactions, RWDS is offset by a second clock, phase-shifted from CK
        • Phase-shifted clock is used to move the RWDS transition edge within the read data eye
    • High-performance:
      • Double Data Rate (DDR)
      • 200MHz clock rate (400MB/s) at 105°C
      • 166MHz clock rate (332MB/s) at 125°C
      • Sequential burst transactions
      • Configurable burst:
        • Wrapped burst lengths:
          • 16 bytes (8 clocks)
          • 32 bytes (16 clocks)
          • 64 bytes (32 clocks)
          • 128 bytes (64 clocks)
      • Linear burst
      • Configurable output drive strength
  • IS67WVO:
    • Industry standard serial interface:
      • Octal Peripheral Interface (OPI) protocol
      • 11 signal pins (CS#, SCLK, DQSM, and SIO0-SIO7)
    • High-performance:
      • Up to 400MB/s
      • Double Transfer Rate (DTR) operation
      • 200MHz (400MB/s)
      • Source synchronous output signal during read operation (DQSM)
      • Data mask during write operation (DQSM)
      • Supports variable latency mode and fixed latency mode
      • Supports wrapped burst mode and continuous burst mode

IS67WVO Block Diagram

Block Diagram - ISSI IS67WVH/IS67WVO Memory Devices

IS67WVH Block Diagram

Block Diagram - ISSI IS67WVH/IS67WVO Memory Devices

Datasheets

Veröffentlichungsdatum: 2025-06-02 | Aktualisiert: 2025-06-26