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iDEAL Semiconductor iS15M7R1S1C SuperQ™ 150V N-Channel Power MOSFETs

iDEAL Semiconductor iS15M7R1S1C SuperQ™ 150V N-Channel Power MOSFETs are high-performance MOSFETs designed to deliver superior efficiency and switching performance in demanding power applications. Built using iDEAL Semiconductor’s proprietary SuperQ™ technology, the iS15M7R1S1C devices offer an exceptionally low RDS(on) of 6.4mΩ and a total gate charge (Qg) of just 63nC (maximum), enabling faster switching speeds and reduced conduction losses. These MOSFETs support a drain current up to 133A and are housed in a compact PDFN 5mm x 6mm package, making the devices ideal for space-constrained designs. With a low gate threshold voltage and robust avalanche energy handling, the iS15M7R1S1C MOSFETs are well-suited for applications such as boost converters, switch-mode power supply (SMPS) control FETs, secondary side synchronous rectifiers, and motor control, where high efficiency and thermal performance are critical.

Features

  • Low on-resistance [RDS(on)]
  • Ultra-low energy stored (EOSS)
  • Ultra-low turn-off energy (EOFF)
  • Optimized QSW for hard switching
  • Low reverse recovery time (Trr and Qrr)
  • PDFN 5mm x 6mm package
  • Lead-free, Halogen-free, and RoHS-compliant

Applications

  • Boost converters and SMPS control FETs
  • Secondary side synchronous rectifiers
  • Motor control

Specifications

  • ±20V maximum gate-to-source voltage
  • Maximum continuous drain current (silicon limited)
    • 133A at +25°C
    • 94A at +100°C
  • 459A maximum pulsed drain current
  • 250W maximum power dissipation
  • 641mJ maximum avalanche energy, single pulse
  • Static
    • 150V minimum drain-to-source voltage
    • 1μA to 100μA maximum drain-to-source leakage current
    • 100nA maximum gate-to-source leakage current
    • 2.5V to 4.1V gate-to-source threshold voltage range
    • 5.4mΩ to 6.4mΩ drain-to-source on-resistance range
    • 82S typical transconductance
  • Dynamic
    • 3893pF maximum input capacitance
    • 64pF maximum reverse transfer capacitance
    • 187pF maximum output capacitance
    • 356pF typical effective output capacitance
    • 1.5Ω maximum series gate resistance
    • 8.5ns typical turn-on delay time
    • 1.7ns typical rise time
    • 25ns typical turn-off delay time
    • 8.4ns typical fall time
  • Gate charge
    • 14nC typical gate-to-source charge
    • 63nC maximum gate charge total
    • 4.9nC typical switching charge
    • 19nC maximum gate-to-drain charge
    • 5V typical gate plateau voltage
    • 170nC maximum output charge
    • 1μJ typical capacitive stored energy
  • Diode
    • 1.0V maximum diode forward voltage
    • 107nC typical reverse recovery charge
    • 74ns typical reverse recovery time
  • -55°C to +175°C maximum operating junction temperature range
  • Maximum thermal resistance
    • 0.6°C/W junction-to-case
    • 50°C/W junction-to-ambient

Schematic

Schematic - iDEAL Semiconductor iS15M7R1S1C SuperQ™ 150V N-Channel Power MOSFETs

Associated MOSFETs

iDEAL Semiconductor iS20M028S1C SuperQ™ 200V N-Ch Power MOSFETs

Designed for SMPS and high-efficiency motor drives in a robust PDFN package measuring 5mm x 6mm.

Learn Moreüber iDEAL Semiconductor iS20M028S1C SuperQ™ 200V N-Ch Power MOSFETs View Productsverwandt mit iDEAL Semiconductor iS20M028S1C SuperQ™ 200V N-Ch Power MOSFETs

iDEAL Semiconductor SuperQ™ Technology

Redefines the fundamental structure of the power MOSFET at the atomic level, from 50% to 95%.

Learn Moreüber iDEAL Semiconductor SuperQ™ Technology
Veröffentlichungsdatum: 2025-07-16 | Aktualisiert: 2025-11-12