AFGHxL25T Single N-Channel 1200V 25A IGBTs

onsemi AFGHxL25T Single N-Channel 1200V 25A Insulated Gate Bipolar Transistors (IGBTs) feature a robust and cost-effective Field Stop VII Trench construction. The onsemi AFGHxL25T provides superior performance in demanding switching applications. Low on-state voltage and minimal switching loss offer optimum hard and soft switching topology performance in automotive applications.

Results: 4
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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Package/Case
Mounting Style
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
onsemi IGBTs FS7 1200V 25A SCR IGBT STAND-ALONE TO247 4L
Datasheet
417In Stock
7,10 €
4,83 €
3,53 €
Min.: 1
Mult.: 1
Si TO-247-4 Through Hole Single 1.2 kV 1.37 V 20 V 50 A 416 W - 55 C + 175 C AFGH4L25T120RW Tube
onsemi IGBTs FS7 1200V 25A SCR IGBT TO247 4L
Datasheet
445In Stock
8,13 €
5,58 €
4,22 €
Min.: 1
Mult.: 1
Si TO-247-4 Through Hole Single 1.2 kV 1.37 V 20 V 50 A 416 W - 55 C + 175 C AFGH4L25T120RWD Tube
onsemi IGBTs FS7 1200V 25A SCR IGBT STAND-ALONE TO247 3L
Datasheet
418In Stock
6,78 €
4,61 €
3,32 €
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.38 V 20 V 50 A 468 W - 55 C + 175 C AFGHL25T120RW Tube
onsemi IGBTs FS7 1200V 25A SCR IGBT TO247 3L
Datasheet
278In Stock
7,82 €
5,36 €
4,02 €
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.38 V 20 V 50 A 468 W - 55 C + 175 C AFGHL25T120RWD Tube