Results: 8
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1200V, 17 mohm G2 957In Stock
2.160On Order
19,05 €
14,23 €
12,30 €
11,64 €
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 97 A 17 mOhms - 10 V, + 25 V 5.1 V 89 nC - 55 C + 175 C 382 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1200V, 26 mohm G2 530In Stock
2.160On Order
14,05 €
10,70 €
8,92 €
7,94 €
7,42 €
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 69 A 25 mOhms - 10 V, + 25 V 5.1 V 124 nC - 55 C + 175 C 289 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1200V, 40 mohm G2 1.519In Stock
240On Order
11,05 €
7,99 €
6,66 €
5,92 €
5,54 €
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 48 A 40 mOhms - 10 V, + 25 V 5.1 V 39 nC - 55 C + 175 C 218 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1200V, 53 mohm G2 374In Stock
480Expected 14/12/2026
9,17 €
4,99 €
4,61 €
4,60 €
4,48 €
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 38 A 53 mOhms - 10 V, + 25 V 5.1 V 30 nC - 55 C + 175 C 182 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1200V, 12 mohm G2 53In Stock
3.360On Order
25,42 €
20,35 €
17,60 €
16,66 €
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 129 A 12 mOhms - 10 V, + 25 V 5.1 V 124 nC - 55 C + 175 C Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1200V, 34 mohm G2 22In Stock
1.440On Order
11,37 €
6,30 €
5,91 €
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 55 A - 10 V, + 25 V 5.1 V 45 nC - 55 C + 175 C 244 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1200V, 22 mohm G2
2.710On Order
16,90 €
12,88 €
10,73 €
9,55 €
8,93 €
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 80 A 22 mOhms - 10 V, + 25 V 5.1 V 71 nC - 55 C + 175 C 329 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1200V, 78 mohm G2
2.860On Order
8,18 €
5,59 €
4,61 €
4,10 €
3,84 €
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 28 A 78 mOhms - 10 V, + 25 V 5.1 V 21 nC - 55 C + 175 C 143 W Enhancement CoolSiC