CoolSiC™ 650V G2 MOSFETs

Infineon Technologies  CoolSiC™ 650V G2 MOSFETs leverage silicon carbide's performance capabilities by enabling lower energy loss, which translates into higher efficiency during power conversion.  Infineon CoolSiC 650V G2 MOSFETs provide benefits for various power semiconductor applications like photovoltaics, energy storage, DC EV charging, motor drives and industrial power supplies. A DC fast charging station for electric vehicles equipped with CoolSiC G2 allows for up to 10% less power loss than previous generations while enabling higher charging capacity without compromising form factors.

Results: 53
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 21In Stock
2.000Expected 20/05/2027
Min.: 1
Mult.: 1
: 2.000

SMD/SMT HSOF-8 1 Channel 650 V 81 A 33 mOhms 5.6 V 42 nC - 55 C + 175 C 365 W Enhancement
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 39In Stock
4.000Expected 25/03/2027
Min.: 1
Mult.: 1
: 2.000

SMD/SMT HSOF-8 1 Channel 650 V 48.1 A 62 mOhms - 7 V, + 23 V 5.6 V 22 nC - 55 C + 175 C 237 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 650 V, 33 mohm G2 199In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 1 Channel 650 V 53 A 41 mOhms - 10 V, + 25 V 5.6 V 34 nC - 55 C + 175 C 194 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 650 V, 60 mohm G2 64In Stock
480On Order
Min.: 1
Mult.: 1

Through Hole TO-247-4 1 Channel 650 V 32.8 A 73 mOhms - 10 V, + 25 V 5.6 V 19 nC - 55 C + 175 C 130 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 58In Stock
240On Order
Min.: 1
Mult.: 1

Through Hole TO-247-4 1 Channel 650 V 26.6 A 95 mOhms - 7 V, + 23 V 5.6 V 14.9 nC - 55 C + 175 C 111 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 1.112In Stock
Min.: 1
Mult.: 1
: 1.000

SMD/SMT TO-263-7 1 Channel 650 V 115 A 18 mOhms - 7 V, + 23 V 5.6 V 79 nC - 55 C + 175 C 416 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 1.805In Stock
Min.: 1
Mult.: 1
: 1.800

SMD/SMT TOLT-16 1 Channel 650 V 40 mOhms Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 1.737In Stock
Min.: 1
Mult.: 1
: 1.800

SMD/SMT TOLT-16 1 Channel 650 V 60 mOhms Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 2.042In Stock
Min.: 1
Mult.: 1
: 2.000

SMD/SMT TO-263-7 1 Channel 50 mOhms Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 670In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 1 Channel 650 V 93 A 18 mOhms - 7 V, + 23 V 5.6 V 79 nC - 55 C + 175 C 341 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 160In Stock
1.680On Order
Min.: 1
Mult.: 1

Through Hole TO-247-3 1 Channel 650 V 83 A 24 mOhms - 7 V, + 23 V 5.6 V 57 nC - 55 C + 175 C 273 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 279In Stock
720On Order
Min.: 1
Mult.: 1

Through Hole TO-247-3 1 Channel 650 V 46 A 49 mOhms - 7 V, + 23 V 5.6 V 28 nC - 55 C + 175 C 172 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 870In Stock
Min.: 1
Mult.: 1
Max.: 240

Through Hole TO-247-3 1 Channel 650 V 38 A 62 mOhms - 7 V, + 23 V 5.6 V 22 nC - 55 C + 175 C 153 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 14In Stock
3.600On Order
Min.: 1
Mult.: 1
: 1.800

SMD/SMT TOLT-16 1 Channel 650 V 15 mOhms Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 225In Stock
1.800Expected 06/10/2026
Min.: 1
Mult.: 1
: 1.800

SMD/SMT TOLT-16 1 Channel 650 V 20 mOhms Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
1.800Expected 06/10/2026
Min.: 1
Mult.: 1
: 1.800

SMD/SMT TOLT-16 1 Channel 650 V 50 mOhms Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 217In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 1 Channel 650 V 38 A 62 mOhms - 7 V, + 23 V 5.6 V 22 nC - 55 C + 175 C 153 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 5In Stock
2.000Expected 29/10/2026
Min.: 1
Mult.: 1
: 2.000

SMD/SMT TO-263-7 1 Channel 40 mOhms Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 10In Stock
Min.: 1
Mult.: 1
: 2.000

SMD/SMT TO-263-7 1 Channel 60 mOhms Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 650 V, 10 mohm G2 9In Stock
720Expected 19/11/2026
Min.: 1
Mult.: 1

Through Hole TO-247-4 1 Channel 650 V 144 A 13.1 mOhms - 10 V, + 25 V 5.6 V 112 nC - 55 C + 175 C 440 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
1.500On Order
Min.: 1
Mult.: 1
: 750

SMD/SMT HDSOP-22 1 Channel 650 V 196 A 8.5 mOhms - 7 V, + 23 V 5.6 V 179 nC - 55 C + 175 C 937 W Enhancement
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
4.000On Order
Min.: 1
Mult.: 1
: 2.000

SMD/SMT HSOF-8 1 Channel 650 V 131 A 18 mOhms - 7 V to 23 V 4.5 V 148 nC - 55 C + 175 C 535 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
3.972Expected 08/04/2027
Min.: 1
Mult.: 1
: 2.000

SMD/SMT HSOF-8 1 Channel 650 V 58.7 A 49 mOhms - 7 V, + 23 V 5.6 V 28 nC - 55 C + 175 C 277 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 650 V, 26 mohm G2
2.313On Order
Min.: 1
Mult.: 1

Through Hole TO-247-4 1 Channel 650 V 64 A 33 mOhms - 10 V, + 25 V 5.6 V 42 nC - 55 C + 175 C 227 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
15.600Expected 10/06/2027
Min.: 1
Mult.: 1

Through Hole TO-247-4 1 Channel 650 V 46 A 49 mOhms - 7 V, + 23 V 5.6 V 28 nC - 55 C + 175 C 172 W Enhancement CoolSiC