NTBG022N120M3S 1200V M3S Series SiC MOSFET

onsemi NTBG022N120M3S 1200V M3S Series SiC (Silicon Carbide) MOSFET is optimized for fast switching applications and offers a low 22mΩ drain-to-source on-resistance. The M3S Series SiC MOSFETs provide optimum performance when driven with an 18V gate drive but also work well with a 15V gate drive. This device features planar technology, which works reliably with a negative gate voltage drive and turns off spikes on the gate. 

Results: 4
Select Image Part #
 Mfr.
Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
onsemi SiC MOSFETs SIC MOS D2PAK-7L 22MOHM 1200V
Datasheet
773In Stock
Min.: 1
Mult.: 1
: 800

SMD/SMT D2PAK-7 1 Channel 1.2 kV 58 A 30 mOhms - 10 V, + 22 V 4.4 V 148 nC - 55 C + 175 C 234 W Enhancement EliteSiC
onsemi SiC MOSFETs SIC MOS D2PAK-7L 30MOHM 1200V M3
Datasheet
1.544In Stock
Min.: 1
Mult.: 1
: 800

SMD/SMT D2PAK-7 1.2 kV 30 Ohms EliteSiC
onsemi SiC MOSFETs SIC MOS D2PAK-7L 70MOHM 1200V M3
Datasheet
66In Stock
800Expected 14/05/2027
Min.: 1
Mult.: 1
: 800

SMD/SMT D2PAK-7 1 Channel 1.2 kV 37 A 91 mOhms - 10 V, + 22 V 4.4 V 49 nC - 55 C + 175 C 252 W Enhancement EliteSiC
onsemi SiC MOSFETs SIC MOS D2PAK-7L 40MOHM 1200V M3
Datasheet
25In Stock
Min.: 1
Mult.: 1
: 800

SMD/SMT D2PAK-7 1 Channel 1.2 kV 51 A 52 mOhms - 10 V, + 22 V 4.4 V 70 nC - 55 C + 175 C 329 W Enhancement EliteSiC