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SiC-MOSFETs SIC_DISCRETE
- AIMW120R045M1XKSA1
- Infineon Technologies
-
1:
19,59 €
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736Auf Lager
-
NRND
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Mouser-Teilenr.
726-AIMW120R045M1XKS
NRND
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Infineon Technologies
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SiC-MOSFETs SIC_DISCRETE
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736Auf Lager
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Min.: 1
Mult.: 1
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Through Hole
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TO-247-3
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N-Channel
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1 Channel
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1.2 kV
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52 A
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59 mOhms
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- 7 V, + 20 V
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5.7 V
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57 nC
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- 55 C
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+ 175 C
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228 W
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Enhancement
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CoolSiC
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SiC-MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
- IMBF170R1K0M1XTMA1
- Infineon Technologies
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1:
5,05 €
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10.930Auf Bestellung
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Mouser-Teilenr.
726-IMBF170R1K0M1XTM
|
Infineon Technologies
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SiC-MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
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10.930Auf Bestellung
Auf Bestellung:
6.930 erwartet ab 28.07.2026
4.000 erwartet ab 07.01.2027
Lieferzeit ab Hersteller:
53 Wochen
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5,05 €
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3,18 €
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2,38 €
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2,03 €
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1,89 €
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1,81 €
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Min.: 1
Mult.: 1
:
1.000
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SMD/SMT
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TO-263-7
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N-Channel
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1 Channel
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1.7 kV
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5.2 A
|
1 Ohms
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- 10 V, + 20 V
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4.5 V
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5 nC
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- 55 C
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+ 175 C
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68 W
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Enhancement
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CoolSiC
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SiC-MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R140M1HXKSA1
- Infineon Technologies
-
1:
7,01 €
-
305Auf Lager
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NRND
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Mouser-Teilenr.
726-IMW120R140M1HXKS
NRND
|
Infineon Technologies
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SiC-MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
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305Auf Lager
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7,01 €
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4,58 €
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3,76 €
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3,29 €
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3,11 €
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Min.: 1
Mult.: 1
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Through Hole
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TO-247-3
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N-Channel
|
1 Channel
|
1.2 kV
|
19 A
|
182 mOhms
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- 7 V, + 23 V
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3.5 V
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13 nC
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- 55 C
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+ 175 C
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94 W
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Enhancement
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CoolSiC
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SiC-MOSFETs SILICON CARBIDE MOSFET
- IMW65R027M1HXKSA1
- Infineon Technologies
-
1:
13,95 €
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1.224Auf Lager
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NRND
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Mouser-Teilenr.
726-IMW65R027M1HXKSA
NRND
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Infineon Technologies
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SiC-MOSFETs SILICON CARBIDE MOSFET
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1.224Auf Lager
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13,95 €
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10,63 €
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8,86 €
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7,89 €
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7,46 €
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Min.: 1
Mult.: 1
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Through Hole
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TO-247-3
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N-Channel
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1 Channel
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650 V
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47 A
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34 mOhms
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- 5 V, + 23 V
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5.7 V
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62 nC
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- 55 C
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+ 150 C
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189 W
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Enhancement
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CoolSiC
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SiC-MOSFETs SILICON CARBIDE MOSFET
- IMZA65R048M1HXKSA1
- Infineon Technologies
-
1:
9,57 €
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40Auf Lager
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240erwartet ab 07.08.2026
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NRND
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Mouser-Teilenr.
726-IMZA65R048M1HXKS
NRND
|
Infineon Technologies
|
SiC-MOSFETs SILICON CARBIDE MOSFET
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40Auf Lager
240erwartet ab 07.08.2026
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9,57 €
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6,77 €
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5,64 €
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5,01 €
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4,76 €
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Min.: 1
Mult.: 1
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Through Hole
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TO-247-4
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N-Channel
|
1 Channel
|
650 V
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39 A
|
64 mOhms
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- 5 V, + 23 V
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5.7 V
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33 nC
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- 55 C
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+ 150 C
|
125 W
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Enhancement
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CoolSiC
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SiC-MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R030M1HXKSA1
- Infineon Technologies
-
1:
15,84 €
-
2.160Auf Bestellung
-
NRND
|
Mouser-Teilenr.
726-IMZ120R030M1HXKS
NRND
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
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2.160Auf Bestellung
Auf Bestellung:
720 erwartet ab 17.09.2026
Lieferzeit ab Hersteller:
45 Wochen
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15,84 €
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10,47 €
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9,05 €
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8,80 €
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Min.: 1
Mult.: 1
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Through Hole
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TO-247-4
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N-Channel
|
1 Channel
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1.2 kV
|
56 A
|
40 mOhms
|
- 7 V, + 23 V
|
5.7 V
|
63 nC
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- 55 C
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+ 150 C
|
227 W
|
Enhancement
|
CoolSiC
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SiC-MOSFETs SILICON CARBIDE MOSFET
- IMZA65R072M1HXKSA1
- Infineon Technologies
-
1:
8,16 €
-
Nicht-auf-Lager-Vorlaufzeit 52 Wochen
-
NRND
|
Mouser-Teilenr.
726-IMZA65R072M1HXKS
NRND
|
Infineon Technologies
|
SiC-MOSFETs SILICON CARBIDE MOSFET
|
|
Nicht-auf-Lager-Vorlaufzeit 52 Wochen
|
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8,16 €
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5,74 €
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4,21 €
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3,70 €
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Min.: 1
Mult.: 1
|
|
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Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
28 A
|
94 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
22 nC
|
- 55 C
|
+ 150 C
|
96 W
|
Enhancement
|
CoolSiC
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Deutschland