M Series 1200V Trench Gate Field-Stop IGBTs

STMicroelectronics M Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. These devices represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. A positive VCE(sat) temperature coefficient and tight parameter distribution also result in safer paralleling operation. Typical applications for these devices include industrial drives, UPS, solar, and welding.

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Menge RoHS ECAD Model Technologie
Verpackung/Gehäuse
Montageart
Konfiguration
Kollektor-Emitterspannung VCEO max.
Sättigungsspannung Kollektor-Emitter
Maximale Gate-Emitter-Spannung
Kollektorgleichstrom bei 25 C
Pd - Verlustleistung
Minimale Betriebstemperatur
Maximale Betriebstemperatur
Serie
Verpackung
STMicroelectronics IGBTs Trench gate field-stop, 1200 V, 50 A, low-loss M series IGBT
Datenblatt
1.074Auf Lager
Min.: 1
Mult.: 1

Si Max247-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 100 A 535 W - 55 C + 175 C M Tube

STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 1200 V, 40 A low loss
Datenblatt
354Auf Lager
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 80 A 468 W - 55 C + 175 C M Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 1200 V, 15 A low loss
Datenblatt
457Auf Lager
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 30 A 283 W - 55 C + 175 C M Tube

STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 1200 V, 40 A low loss
Datenblatt
Vorlaufzeit 22 Wochen
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 80 A 468 W - 55 C + 175 C M Tube

STMicroelectronics IGBTs Trench gate field-stop, 1200 V, 8 A low loss M series IGBT in a TO-220 package
Datenblatt
880erwartet ab 17.09.2026
Min.: 1
Mult.: 1

Si TO-220-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 16 A 167 W - 55 C + 175 C M Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
Datenblatt
1.593erwartet ab 07.10.2026
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 50 A 375 W - 55 C + 175 C M Tube

STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
Datenblatt
592erwartet ab 13.08.2027
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 16 A 167 W - 55 C + 175 C M Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
Datenblatt
Nicht-auf-Lager-Vorlaufzeit 22 Wochen
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 50 A 326 W - 55 C + 175 C M Tube