2SC5200-O(Q)

Toshiba
757-2SC5200-O(Q)
2SC5200-O(Q)

Mfr.:

Description:
Bipolar Transistors - BJT NPN 230V 15A

Lifecycle:
NRND:
Not recommended for new designs.
Datasheet:
ECAD Model:
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Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: Bipolar Transistors - BJT
RoHS:  
Si
Through Hole
TO-3P-3
NPN
Single
15 A
230 V
230 V
5 V
400 mV
150 W
30 MHz
+ 150 C
2SC
Tray
Brand: Toshiba
Continuous Collector Current: 15 A
DC Collector/Base Gain hFE Min: 55
DC Current Gain hFE Max: 160
Product Type: BJTs - Bipolar Transistors
Factory Pack Quantity: 100
Subcategory: Transistors
Unit Weight: 6,800 g
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Attributes selected: 0

Datasheet

Compliance Codes
TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541219000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
Japan
Assembly Country of Origin:
Japan
Country of Diffusion:
Japan
The country is subject to change at the time of shipment.

In Stock: 22.731

Stock:
22.731
Can Dispatch Immediately
On Order:
3.000
Expected 02/11/2026
Factory Lead Time:
23
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
3,73 € 3,73 €
2,43 € 24,30 €
1,66 € 166,00 €
1,42 € 710,00 €
1,40 € 7.000,00 €

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