Neueste MOSFETs – Mouser Deutschland

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Diotec Semiconductor DI009N10PQ N-Channel Power MOSFET

03.10.2026

- Supports a drain‑source voltage of 100V and delivers 9A continuous drain current at 25°C.

Diotec Semiconductor DI040N10D1-AQ N-Channel Power MOSFET

03.10.2026

- Supports a drain‑source voltage of 100V and delivers 40A continuous drain current at 25°C.

Diotec Semiconductor DI045N10PT-AQ N-Channel Power MOSFET

03.10.2026

- Supports a drain‑source voltage of 100V and delivers 45A continuous drain current at 25°C.

Diotec Semiconductor DI050N04BPT-AQ N-Channel Power MOSFET

03.10.2026

- Supports a drain‑source voltage of 40V and delivers 50A continuous drain current at 25°C.

Diotec Semiconductor DIJ2A7N90 N-Channel Power MOSFET

03.06.2026

- Supports a drain‑source voltage of 900V and delivers 2.7A at 25°C continuous drain current.

Diotec Semiconductor Automotive Advanced Trench Technology MOSFETs

03.05.2025

- Enhances performance by providing fast switching times and low total gate charge.

Diotec Semiconductor DI2A8N03PWK2-AQ Dual N-Channel Power MOSFET

01.13.2025

- Features dual MOSFETs with a protected gate and a powerQFN 2x2-dual space-saving package.

Diotec Semiconductor DI005C04PTK-AQ N+P Channel Power MOSFET

01.13.2025

- Offers low on-state resistance and fast switching, with AEC-Q101 qualified performance.

Diotec Semiconductor DI022N20PQ-AQ N-Channel Power MOSFET

01.13.2025

- Offers 200V rating and 22A current, with 100% avalanche tested and AEC-Q101 qualified performance.

Diotec Semiconductor DI022P06D1-AQ P-Channel Power MOSFET

01.13.2025

- Provides -60V rating and -22A current with advanced trench technology and fast switching times.

Diotec Semiconductor DI065N08D1-AQ N-Channel Power MOSFET

01.13.2025

- Provides 80V drain-source voltage with advanced trench technology and logic-level gate drive.

Diotec Semiconductor MMFTP3334K P-Channel Enhancement Mode FET

02.24.2023

- Offers fast switching times, high drain current (4A maximum), and low on-state resistance.

Diotec Semiconductor MMFTP6312D Dual P-Channel MOSFET

02.24.2023

- Offers fast switching times and a 20V maximum drain-source voltage in a SOT-26 (SOT-457) package.

Diotec Semiconductor MMFTP2319 P-Channel Enhancement Mode FET

02.24.2023

- Offers fast switching times and a 4.2A maximum drain current in a SOT-23/TO-236 package.

Diotec Semiconductor DI020N06D1 N-Channel Power MOSFETs

02.23.2023

- Offers low on-state resistance, low gate charge, and fast switching times with an Avalanche rating.

Diotec Semiconductor DI006H03SQ N/P-Channel Power MOSFET H-Bridge

02.23.2023

- Delivers a low on-state resistance, a low gate charge, and fast switching times.

Diotec Semiconductor Advanced Trench Technology Power MOSFETs

02.17.2023

- Offered as N, P, or dual N+P channel types in single, dual, and H bridge configurations.

Diotec Semiconductor DIxxNxx-PQ N-Channel Power MOSFETs

10.19.2022

- Features low ON-state resistance, fast switching times, and extremely low thermal resistance.

Diotec Semiconductor MMBT7002K N-Channel Enhancement Mode FETs

05.19.2022

- Features a 60V drain-source voltage, 20V gate-source voltage, and 350mW power dissipation.

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onsemi NVBYST0D8N08X Single N-Channel Power MOSFET

04.14.2026

- Optimized for high‑voltage operation and withstands fast switching and high-current stresses.

iDEAL Semiconductor IS20M8R0S1P SuperQ™ 200V N-Channel Power MOSFET

04.07.2026

- Low switching losses, high short-circuit withstand capability (SCWC), and comes in a TO-220 package.

onsemi NTMFD0D9N02P1E MOSFET

04.06.2026

- Dual N-channel MOSFET designed with low Rg for fast switching applications.

STMicroelectronics STL059N4S8AG Leistungs-MOSFET

03.31.2026

- Ein 40-V-N-Kanal-Anreicherungstyp-Leistungs-MOSFET, der in Smart StripFET F8 Technologie entwickelt wurde.

Toshiba N-Kanal/P-Kanal Leistungs-MOSFETs

03.31.2026

- Ideal für Hochgeschwindigkeitsschaltungen, Leistungsmanagement-Schalter DC/DC-Wandler und Motortreiber.

Infineon Technologies Leistungs-MOSFETs OptiMOS™ 6 60 V

03.27.2026

- Bietet im Vergleich zu OptiMOS 5 ein überlegenes Betriebsverhalten dank robuster Leistungs-MOSFET- Technologie.

Infineon Technologies Leistungs-MOSFETs OptiMOS™ 7 25 V mit N-Kanal

03.27.2026

- Anwendungsoptimiertes Betriebsverhalten, das Betriebsverhalten für Rechenzentren, Server & KI ermöglicht.

iDEAL Semiconductor iS20M6R3S1P SuperQ™ 200V N-Channel Power MOSFET

03.24.2026

- Delivers ultra-low conduction and switching losses in a robust TO-220 package.

Infineon Technologies OptiMOS™ 8 Leistungs-MOSFETs

03.17.2026

- Hierbei handelt es sich um N-Kanal-MOSFETs mit normalem Pegel 80 V oder 100 V und sehr niedrigem Einschaltwiderstand [RDS(ON)].

onsemi NVMFD5873NL Dual-n-Kanal-Leistungs-MOSFETs

03.13.2026

- Für kompakte und effiziente Designs, einschließlich hoher thermischer Leistung, konzipiert.

Diotec Semiconductor DI009N10PQ N-Channel Power MOSFET

03.10.2026

- Supports a drain‑source voltage of 100V and delivers 9A continuous drain current at 25°C.

Diotec Semiconductor DI040N10D1-AQ N-Channel Power MOSFET

03.10.2026

- Supports a drain‑source voltage of 100V and delivers 40A continuous drain current at 25°C.

Diotec Semiconductor DI050N04BPT-AQ N-Channel Power MOSFET

03.10.2026

- Supports a drain‑source voltage of 40V and delivers 50A continuous drain current at 25°C.

Diotec Semiconductor DI045N10PT-AQ N-Channel Power MOSFET

03.10.2026

- Supports a drain‑source voltage of 100V and delivers 45A continuous drain current at 25°C.

Diotec Semiconductor DIJ2A7N90 N-Channel Power MOSFET

03.06.2026

- Supports a drain‑source voltage of 900V and delivers 2.7A at 25°C continuous drain current.

Infineon Technologies N-Kanal OptiMOS ™ 7 80-V-Leistungs-MOSFETs

03.05.2026

- Normalstufige 80-V-N-Kanal-Bauteile, normale Stufe, mit überlegenem thermischem Widerstand in einem PG‐TDSON‐8-Gehäuse.

iDEAL Semiconductor iS20M5R5S1T 200V N-channel SuperQ™ Power MOSFETs

02.19.2026

- Features low switching losses, QSW, and EOSS, suitable for high-efficiency SMPS and motor drives.

IXYS X4-Class Leistungs-MOSFETs

02.02.2026

- Sie bieten einen niedrigen Einschaltwiderstand und geringe Leitungsverluste bei verbessertem Wirkungsgrad.

onsemi NVBYST0D6N08X 80-V-N-Kanal Leistungs-MOSFET

12.26.2025

- Dieses Bauteil bietet einen niedrigen QRR und eine Body-Diode mit sanfter Wiederherstellung in einem TCPAK1012-Gehäuse (TopCool).

Infineon Technologies OptiMOS™ 6 80 V Leistungs-MOSFETs

12.23.2025

- Setzt mit einem breiten Portfolio branchenweit Maßstäbe in puncto Leistung.

onsemi NVMFD5877NL Dual-n-Kanal-MOSFET

12.19.2025

- Entwickelt für kompakte und effiziente Designs mit hoher thermischer Leistung.

onsemi P-Kanal MOSFET mit niedrigem/mittlerem Spannungsbereich, Typ NTTFS007P02P8

11.25.2025

- Hergestellt mit PowerTrench-Technologie für extrem niedrige RDS(on)-Schalt-Performance und Robustheit.

onsemi FDC642P-F085 Kleinsignal-MOSFET

11.25.2025

- Bietet eine Hochleistungstrench-Technologie für extrem niedrigen RDS(on) und schnelle Schaltgeschwindigkeit.

iDEAL Semiconductor iS20M028S1C SuperQ™ 200V N-Ch Power MOSFET

11.24.2025

- Designed for SMPS and high-efficiency motor drives in a robust PDFN package measuring 5mm x 6mm.

onsemi NVD5867NL Einzel-N-Kanal-Leistungs-MOSFET

11.20.2025

- Das Bauteil verfügt über eine Drain-Source-Spannung von 60 V, einen Drain-Source-On-Widerstand von 39 mΩ und ist gemäß AEC-Q101 zugelassen.

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