IRFP460 MOSFETs

Results: 7
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Packaging

Vishay Semiconductors MOSFETs TO247 500V 20A N-CH MOSFET 1.469In Stock
Min.: 1
Mult.: 1
Max.: 1.000

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 20 A 270 mOhms - 20 V, 20 V 2 V 120 nC - 55 C + 150 C 280 W Enhancement Tube

Vishay Semiconductors MOSFETs TO247 500V 20A N-CH MOSFET 2.840In Stock
Min.: 1
Mult.: 1
Max.: 1.000

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 20 A 270 mOhms - 30 V, 30 V 2 V 105 nC - 55 C + 150 C 280 W Enhancement Tube

Vishay Semiconductors MOSFETs TO247 500V 20A N-CH MOSFET 5.172In Stock
Min.: 1
Mult.: 1
Max.: 1.000

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 20 A 270 mOhms - 20 V, 20 V 2 V 210 nC - 55 C + 150 C 280 W Enhancement Tube

STMicroelectronics MOSFETs
No
Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 20 A 220 mOhms - 20 V, 20 V - 65 C + 150 C 220 W Enhancement Tube

Vishay / Siliconix MOSFETs RECOMMENDED ALT IRFP
No
Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 20 A 270 mOhms - 20 V, 20 V 2 V 210 nC - 55 C + 150 C 220 W Enhancement Tube

IXYS MOSFETs 500V 20A

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 20 A 270 mOhms - 20 V, 20 V - 55 C + 150 C 260 W Enhancement Tube
Vishay Semiconductors IRFP460HPBF
Vishay Semiconductors MOSFETs N-CHANNEL 500V 563In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247AC-3 N-Channel 1 Channel 500 V 20 A 270 mOhms - 30 V, 30 V 4 V 77 nC - 55 C + 150 C 329 W Tube