HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

Ergebnisse: 720
Auswählen Bild Teile-Nr. Herst. Beschreibung Datenblatt Verfügbarkeit Preis (EUR) Ergebnisse in der Tabelle nach dem Einheitspreis bei Ihrer Menge filtern. Menge RoHS ECAD Model Technologie Montageart Verpackung/Gehäuse Transistorpolung Anzahl der Kanäle Vds - Drain-Source-Durchschlagspannung Id - Drain-Gleichstrom Rds On - Drain-Source-Widerstand Vgs - Gate-Source-Spannung Vgs th - Gate-Source-Schwellspannung Qg - Gate-Ladung Minimale Betriebstemperatur Maximale Betriebstemperatur Pd - Verlustleistung Kanalmodus Qualifikation Handelsname Verpackung
IXYS MOSFETs TO263 300V 56A N-CH X3CLASS 794Auf Lager
Min.: 1
Mult.: 1

Si SMD/SMT TO-263-3 N-Channel 1 Channel 300 V 56 A 27 mOhms - 20 V, 20 V 2.5 V 56 nC - 55 C + 150 C 320 W Enhancement HiPerFET Tube
IXYS MOSFETs TO247 250V 120A N-CH X3CLASS 1.067Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 250 V 120 A 12 mOhms - 20 V, 20 V 2.5 V 122 nC - 55 C + 150 C 480 W Enhancement HiPerFET Tube

IXYS MOSFETs PolarHV HiPerFETs 500V-1.2Kv Red Rds 2.347Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 900 V 18 A 600 mOhms - 30 V, 30 V 6 V 97 nC - 55 C + 150 C 540 W Enhancement HiPerFET Tube
IXYS MOSFETs tbd Amps 500V 0.06 Ohms Rds 209Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 500 V 70 A 52 mOhms - 30 V, 30 V 5 V 240 nC - 55 C + 150 C 625 W Enhancement HiPerFET Tube
IXYS MOSFETs 1000V 26A TO-268HV Power MOSFET 140Auf Lager
Min.: 1
Mult.: 1

Si SMD/SMT TO-268-3 N-Channel 1 Channel 1 kV 8 A 320 mOhms - 30 V, 30 V 3.5 V 113 nC - 55 C + 150 C 860 W Enhancement HiPerFET Tube
IXYS MOSFETs 500V 60A 0.1Ohm PolarP3 Power MOSFET 268Auf Lager
Min.: 1
Mult.: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 500 V 60 A 100 mOhms - 30 V, 30 V 5 V 96 nC - 55 C + 150 C 1.04 mW Enhancement HiPerFET Tube

IXYS MOSFETs 500V 80A 298Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 80 A 65 mOhms - 30 V, 30 V 3 V 197 nC - 55 C + 150 C 1.04 mW Enhancement HiPerFET Tube
IXYS MOSFETs 200V, 60A current capacity, Ultra junction X4, TO-263 package, MOSFET 512Auf Lager
Min.: 1
Mult.: 1

Si SMD/SMT TO-263-3 N-Channel 1 Channel 200 V 60 A 21 mOhms - 20 V, 20 V 4.5 V 11 nC - 55 C + 175 C 250 W Enhancement X4-Class Tube

IXYS MOSFETs TO264 650V 120A N-CH X2CLASS 410Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 120 A 23 mOhms - 30 V, 30 V 3 V 230 nC - 55 C + 150 C 1.25 mW Enhancement HiPerFET Tube
IXYS MOSFETs Polar Power MOSFET HiPerFET 231Auf Lager
Min.: 1
Mult.: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 kV 5 A 2.8 Ohms - 30 V, 30 V 6 V 33.4 nC - 55 C + 150 C 250 W Enhancement HiPerFET Tube
IXYS MOSFETs 70 Amps 75V 0.0120 Rds 49Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 75 V 70 A 12 mOhms - 20 V, 20 V 2 V 46 nC - 55 C + 175 C 150 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NChHiPerFET-Polar3 TO-263D2 21Auf Lager
350erwartet ab 04.05.2026
Min.: 1
Mult.: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 300 V 36 A 110 mOhms - 20 V, 20 V 2.5 V 30 nC - 55 C + 150 C 347 W Enhancement HiPerFET Tube
IXYS MOSFETs TO268 200V 220A N-CH X3CLASS 28Auf Lager
300erwartet ab 02.06.2026
Min.: 1
Mult.: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 200 V 220 A 6.2 mOhms - 20 V, 20 V 2.5 V 204 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube
IXYS MOSFETs TO220 650V 8A N-CH X2CLASS 28Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 8 A 500 mOhms - 30 V, 30 V 3 V 12 nC - 55 C + 150 C 150 W Enhancement HiPerFET Tube
IXYS MOSFETs 500V 98A 0.05Ohm PolarP3 Power MOSFET 22Auf Lager
300erwartet ab 02.07.2026
Min.: 1
Mult.: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 500 V 98 A 50 mOhms - 30 V, 30 V 5 V 197 nC - 55 C + 150 C 1.3 kW Enhancement HiPerFET Tube
IXYS MOSFETs 180 Amps 100V 6.1 Rds 228Auf Lager
Min.: 1
Mult.: 1
Si SMD/SMT TO-263-7 N-Channel 1 Channel 100 V 180 A 6.4 mOhms - 55 C + 175 C 480 W Enhancement HiPerFET Tube
IXYS MOSFETs 200 Amps 55V 0.0042 Rds 22Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 55 V 200 A 4.2 mOhms - 20 V, 20 V 2 V 109 nC - 55 C + 175 C 360 W Enhancement HiPerFET Tube
IXYS MOSFETs 170A 200V 1Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 200 V 170 A 11 mOhms - 20 V, 20 V 5 V 265 nC - 55 C + 175 C 1.15 kW Enhancement HiPerFET Tube

IXYS MOSFETs 650V/64A Power MOSFET 3Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 64 A 51 mOhms - 30 V, 30 V 3 V 143 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube
IXYS MOSFETs 600V 14A 262Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 14 A 550 mOhms - 30 V, 30 V - 55 C + 150 C 300 W Enhancement HiPerFET Tube
IXYS MOSFETs TO220 120V 140A N-CH TRENCH 415Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 120 V 140 A 10 mOhms - 20 V, 20 V 2.5 V 174 nC - 55 C + 175 C 577 W Enhancement HiPerFET Tube
IXYS MOSFETs TO263 150V 42A N-CH TRENCH 124Auf Lager
Min.: 1
Mult.: 1
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 150 V 42 A 45 mOhms - 30 V, 30 V 2.5 V 21 nC - 55 C + 175 C 200 W Enhancement HiPerFET Tube
IXYS MOSFETs TO247 200V 140A N-CH X3CLASS 95Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 140 A 9.6 mOhms - 20 V, 20 V 2.5 V 127 nC - 55 C + 150 C 480 W Enhancement HiPerFET Tube
IXYS MOSFETs TRENCHT2 HIPERFET PWR MOSFET 100V 180A 237Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 100 V 180 A 6 mOhms - 20 V, 20 V 2 V 185 nC - 55 C + 175 C 480 W Enhancement HiPerFET Tube
IXYS MOSFETs N-Channel: Power MOSFET w/Fast Diode 176Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-3P-3 N-Channel 1 Channel 300 V 94 A 36 mOhms - 20 V, 20 V 3 V 102 nC - 55 C + 150 C 1.04 mW Enhancement HiPerFET Tube