MMBT3906 RFG

MMBT3906 PNP Bipolar Transistor

Taiwan Semiconductor MMBT3906 PNP Bipolar Transistor is designed to achieve low power loss and high surge current capability. This transistor delivers high efficiency and is ideal for automated placement. The MMBT3906 transistor is designed with -40V of collector-to-base voltage (V_CBO), -40V of collector-to-emitter voltage (V_CEO), and -5V of emitter-to-base voltage (V_EBO). This transistor features a collector current of -200mA and a power dissipation (P_D) of 350mW. The MMBT3906 PNP transistor offers a Moisture Sensitivity Level (MSL-1) as per the J-STD-020 standards and is halogen-free according to IEC 61249-2-21 standards. Ideally, this transistor is used in Switching Mode Power Supply (SMPS), adapters, on-board DC/DC converters, and lighting applications.