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Überlegungen beim Design von SiC-MOSFETs

September 15, 2023 in Alle, Allgemein, Steckverbinder von Marcel Consée

Lesen Sie in diesem Beitrag, welche Vorteile SiC-MOSFETs bieten und für welche Applikationen sich die 4. Generation von SiC-MOSFETS von Rohm Semiconductor eignet.

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Tags: 4. Generation SiC-MOSFETs, Diskret, IGBT, Leistungswandler, Rohm, Rohm Semiconductor, SiC-MOSFETs, Thermische Designs

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Mouser® and Mouser Electronics® are trademarks of Mouser Electronics, Inc. in the U.S. and/or other countries. All other trademarks are the property of their respective owners. Corporate headquarters and logistics centre in Mansfield, Texas USA.

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Copyright ©2026 Mouser Electronics, Inc.

Mouser® and Mouser Electronics® are trademarks of Mouser Electronics, Inc. in the U.S. and/or other countries. All other trademarks are the property of their respective owners. Corporate headquarters and logistics centre in Mansfield, Texas USA.