2SA1943-O(Q)

Toshiba
757-2SA1943-O(Q)
2SA1943-O(Q)

Mfr.:

Description:
Bipolar Transistors - BJT PNP 230V 15A

Lifecycle:
NRND:
Not recommended for new designs.
Datasheet:
ECAD Model:
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Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: Bipolar Transistors - BJT
RoHS:  
Si
Through Hole
TO-3P-3
PNP
Single
15 A
230 V
230 V
5 V
1.5 V
150 W
30 MHz
+ 150 C
2SA
Tray
Brand: Toshiba
Continuous Collector Current: - 15 A
DC Collector/Base Gain hFE Min: 55
DC Current Gain hFE Max: 160
Product Type: BJTs - Bipolar Transistors
Factory Pack Quantity: 100
Subcategory: Transistors
Unit Weight: 6,756 g
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Attributes selected: 0

Datasheet

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Compliance Codes
TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541210000
USHTS:
8541290065
JPHTS:
8541210101
KRHTS:
8541219000
MXHTS:
85412101
ECCN:
EAR99
Origin Classifications
Country of Origin:
Japan
Assembly Country of Origin:
Not available
Country of Diffusion:
Japan
The country is subject to change at the time of shipment.

Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
2.050
Expected 08/01/2027
2.400
Expected 05/02/2027
Factory Lead Time:
26
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
6,65 € 6,65 €
4,45 € 44,50 €
3,58 € 358,00 €
3,18 € 1.590,00 €
2,56 € 2.560,00 €

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